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MRF085H 1 rf device data nxp semiconductors rf power ldmos transistor high ruggedness n--channel enhancement--mode lateral mosfet this high ruggedness device is designed for use in high vswr industrial, scientific and medical applications and sub--ghz aerospace and defense and mobile radio applications. its unmatched input and output design allows for wide frequency range use from 1.8 to 1215 mhz. typical performance: v dd =50vdc frequency (mhz) signal type p out (w) g ps (db) ? d (%) 30?520 (1,2) cw 50 cw 14.0 40.0 520 (3) cw 85 cw 25.6 73.3 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 520 (3) cw > 65:1 at all phase angles 0.56 (3 db overdrive) 50 no device degradation 1. measured in 30?520 mhz broadband reference circuit. 2. the values shown are the minimum m easured performance numbers across the indicated frequency range. 3. measured in 520 mhz narrowband test circuit (page 5). features ? unmatched input and output allowing wide frequency range utilization ? device can be used single--ended or in a push--pull configuration ? characterizedfrom30to50vforeaseofuse ? suitable for linear application ? integrated esd protection with great er negative gate--source voltage range for improved class c operation typical applications ? industrial, scientific, medical (ism) ? laser generation ? plasma etching ? particle accelerators ? industrial heating, weld ing and dryi ng systems ? broadcast ? radio broadcast ? vhf tv broadcast ? aerospace ? vhf omnidirectional range (vor) ? hf and vhf communications ? weather radar ? mobile radio ? vhf and uhf radios document number: MRF085H rev. 1, 10/2017 nxp semiconductors technical data 1.8?1215 mhz, 85 w cw, 50 v wideband rf power ldmos transistor MRF085H ni--650h--4l figure 1. pin connections (top view) drain a drain b gate a gate b note: the backside of the package is the source terminal for the transistor. 31 42 ? 2017 nxp b.v.
2 rf device data nxp semiconductors MRF085H table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +133 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 50, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c total device dissipation @ t c =25 ? c derate above 25 ? c p d 235 1.18 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case cw: case temperature 85 ? c, 85 w cw, 50 vdc, i dq(a+b) = 100 ma, 520 mhz r ? jc 0.85 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2000 v charge device model (per jesd22--c101) c2, passes 500 v table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 400 nadc drain--source breakdown voltage (v gs =0vdc,i d =50ma) v (br)dss 133 ? ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 2 ? adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 7 ? adc on characteristics gate threshold voltage (4) (v ds =10vdc,i d =85 ? adc) v gs(th) 1.5 2.0 3.0 vdc gate quiescent voltage (v dd =50vdc,i d(a+b) = 100 madc, measured in functional test) v gs(q) 2.0 2.6 3.3 vdc drain--source on--voltage (4) (v gs =10vdc,i d = 210 madc) v ds(on) ? 0.27 ? vdc dynamic characteristics (4) reverse transfer capacitance (v ds =50vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 0.17 ? pf output capacitance (v ds =50vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 14.7 ? pf input capacitance (v ds =50vdc,v gs =0vdc ? 30 mv(rms)ac @ 1 mhz) c iss ? 39.0 ? pf 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 4. each side of device measured separately. (continued)
MRF085H 3 rf device data nxp semiconductors table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in nxp test fixture, 50 ohm system) v dd =50vdc,i dq(a+b) = 100 ma, p out =85wcw,f=520mhz power gain g ps 24.0 25.6 28.0 db drain efficiency ? d 70.0 73.3 ? % input return loss irl ? ?21 ?9 db load mismatch/ruggedness (in nxp test fixture, 50 ohm system) i dq = 150 ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 520 cw > 65:1 at all phase angles 0.56 (3 db overdrive) 50 no device degradation table 5. ordering information device tape and reel information package MRF085Hr3 r3 suffix = 250 units, 44 mm tape width, 13--inch reel ni--650h--4l MRF085Hr5 r5 suffix = 50 units, 44 mm tape width, 13--inch reel ni--650h--4l
4 rf device data nxp semiconductors MRF085H typical characteristics 100 ?50 0 ?25 25 50 75 i dq(a+b) =20ma normalized v gs(q) 1.04 0.94 v dd =50vdc 0.96 0.98 1.00 1.02 1.06 100 ma 200 ma 300 ma 1 100 020 10 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 10 c rss measured with ? 30 mv(rms)ac @1mhz,v gs =0vdc note: each side of device measured separately. c iss 30 40 50 c oss 0.1 t c , case temperature ( ? c) figure 3. normalized v gs versus quiescent current and case temperature 20 i dq (ma) slope (mv/ ? c) 100 200 300 ?2.35 ?1.88 ?1.78 ?1.59 250 10 8 90 t j , junction temperature ( ? c) figure 4. mttf versus junction temperature ? cw note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http:/www.nxp.com/rf/calculators . 10 6 10 5 110 130 mttf (hours) 150 10 7 10 4 170 190 210 230 i d =1.86amps v dd =50vdc i d =2.59amps i d =2.34amps
MRF085H 5 rf device data nxp semiconductors 520 mhz narrowband production test fixture ? 4.0 ?? 5.0 ? (10.2 mm ? 12.7 mm) figure 5. MRF085H narrowband test circuit component layout ? 520 mhz c7 c19 c6 c3 c4 c5 l2 l1 l3 c2 c9 c12 c14 c15 c16 c17 c8 c23 c18 c20 c21 c22 l6 coax1 coax2 coax3 coax4 b1 c1 b2 l4 l5 c10 c11 MRF085H rev. 0 d93611 cut out area c13 table 6. MRF085H narrowband test circuit c omponent designations and values ? 520 mhz part description part number manufacturer b1, b2 short rf bead 2743019447 fair-rite c1, c7 22 ? f, 35 v tantalum capacitor t491x226k035at kemet c2, c6, c9, c18 240 pf chip capacitor atc100b241jt200xt atc c3, c4 51 pf chip capacitor atc100b510gt500xt atc c5 36 pf chip capacitor atc100b360jt500xt atc c8 5.1 pf chip capacitor atc100b5r1ct500xt atc c10, c20 10 pf chip capacitor atc200b103kt50xt atc c11, c21 0.01 ? f chip capacitor c1825c103k1gactu kemet c12, c19 0.1 ? f chip capacitor c1812f104k1ractu kemet c13, c22 220 ? f, 100 v electrolytic capacitor mcgpr100v227m16x26-rh multicomp c14, c15, c16, c17 120 pf chip capacitor atc100b121jt300xt atc c23 5.6 pf chip capacitor atc100b5r6ct500xt atc coax1, 2, 3, 4 25 ? , semi rigid coax, 2.4? shield length ut141-25 precision tube company l1, l2, l5, l6 2.5 nh inductor, 1 turn a01tklc coilcraft l3, l4 22 nh inductor, 7 turns b07tjlc coilcraft pcb arlon ad255a, 0.030 ? , ? r =2.55 d93611 mtl
6 rf device data nxp semiconductors MRF085H typical characteristics ? 520 mhz production test fixture p in , input power (dbm) 35 30 p out , output power (dbm) 30 25 10 20 15 40 45 5 520 88 94 f (mhz) p1db (w) p3db (w) figure 6. cw output power versus input power p out , output power (watts) figure 7. power gain and drain efficiency versus cw output power and quiescent current g ps , power gain (db) ? d, drain efficiency (%) 26 25 27 10 100 0 80 70 60 50 28 ? d g ps v dd = 50 vdc, f = 520 mhz 24 t c = ?40 _ c 22 21 20 27 0.5 10 100 10 80 70 60 50 40 30 20 28 p out , output power (watts) g ps , power gain (db) ? d, drain efficiency (%) 50 23 24 23 25 26 g ps 0 200 200 v dd =50vdc,i dq(a+b) = 100 ma f = 520 mhz 22 21 20 40 30 20 10 i dq(a+b) = 300 ma 100 ma 200 ma 300 ma 200 ma 100 ma 1 1 25 _ c 85 _ c 25 _ c v dd =50vdc,i dq(a+b) = 100 ma f = 520 mhz figure 8. power gain and drain efficiency versus cw output power 0 p out , output power (watts) figure 9. power gain versus cw output power and drain--source voltage 24 g ps , power gain (db) 20 18 60 80 100 22 v dd =30v 20 40 50 v 26 40 v 45 v 28 i dq(a+b) = 100 ma, f = 520 mhz 35 v ?40 _ c 85 _ c 20 ma ? d
MRF085H 7 rf device data nxp semiconductors 520 mhz narrowband production test fixture f mhz z source ? z load ? 520 1.32 + j20.2 22.6 + j18.2 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 10. narrowband series equivalent source and load impedance ? 520 mhz input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ?
8 rf device data nxp semiconductors MRF085H package dimensions
MRF085H 9 rf device data nxp semiconductors
10 rf device data nxp semiconductors MRF085H product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1908: solder reflow attach method for high power rf devices in air cavity packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 july 2017 ? initial release of data sheet 1 oct. 2017 ? table 5, ordering information: added MRF085Hr3 to t able and r3 suffix tape and reel information, p. 3
MRF085H 11 rf device data nxp semiconductors how to reach us: home page: nxp.com web support: nxp.com/support document number: MRF085H rev. 1, 10/2017 information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does nxp assume any liability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential o r incidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp and the nxp logo are trademarks of nxp b.v. all other pr oduct or service names are the property of their respective owners. e 2017 nxp b.v.

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